mitsubishi fm600tu-3a high power switching use insulated package fm600tu-3a application ac motor control of forklift (battery power source), ups i d(rms) .......................................................... 300a v dss ............................................................. 150v insulated type 6-elements in a pack ntc thermistor inside ul recognized ye llow card no.e80276 file no.e80271 feb. 2009 7 12 1 6 13 14 25 4 w uv np 14 (screwing depth) tc measured point p n (7)g u p (1)s u p (10)g u n uvw (4)s u n (8)g v p (1)s u p (7)g u p (13)th1 (2)s v p (8)g v p (3)s w p (9)g w p (4)s u n (10)g u n (5)s v n (11)g v n (6)s w n a b (12)g w n (14)th2 (2)s v p (11)g v n (5)s v n (9)g w p (3)s w p (12)g w n (6)s w n circuit diagram (13) ntc (14) 6.5 (15.8) 3 9.2 (8.7) 7 7 30 36 10 70.9 15.2 30 36 10 3.96 3 38 5-6.5 20 20 20 a b 14 110 97 ? 35 ? 16.5 16 16 32 6.5 (6) (6) 22.75 (17.5) (14.5) 9.1 (6) (14.5) 4 6.5 22.57 90 label 80 75 67 ? 11.5 26 32 32 16.5 14 14 . / 6 5 4 . 0 6 / 5 * / ( ) 0 - & 4 housing type of a and b (tyco electronics p/n:) a: 917353-1 b: 179838-1 outline drawing & circuit diagram dimensions in mm
feb. 2009 2 150 20 300 600 300 300 600 960 1300 ?0 ~ +150 ?0 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 mitsubishi fm600tu-3a high power switching use insulated package v v a rms a a a rms a w w c c v rms n ?m n ?m g drain-source voltage gate-source voltage drain current a valanche current source current maximum power dissipation channel temperature storage temperature isolation voltage mounting torque w eight g-s short d-s short t c ?= 114 c* 3 pulse* 2 l = 10 h pulse* 2 pulse* 2 t c = 25 c t c ?= 25 c* 3 terminals to base plate, f = 60hz, ac 1 minute main terminals m6 screw mounting m6 screw t ypical value unit ratings v dss v gss i d(rms) i dm i da i s(rms) * 1 i sm * 1 p d * 4 p d * 4 t ch t stg v iso conditions item symbol absolute maximum ratings (t ch = 25c unless otherwise specified.) * 1: it is characteristics of the anti-parallel, source-drain free-wheel diode (fwdi). * 2: pulse width and repetition rate should be such that the device channel temperature (t ch ) does not exceed t ch max rating. * 3: case temperature (tc? measured point is just under the chips. if use this value, r th(f-a) should be measured just under the chips. * 4: pulse width and repetition rate should be such as to cause negligible temperature rise. * 5: t th is thermistor temperature. * 6: * 7: case temperature (tc) measured point is shown in page outline drawing. * 8: typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. min. 4.7 ma v a m ? v m ? nf nc ns ns c v k/w drain cutoff current gate-source threshold voltage gate leakage current static drain-source on-state resistance static drain-source on-state voltage lead resistance input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time t urn-on rise time tu rn-off delay time t urn-off fall time reverse recovery time reverse recovery charge source-drain voltage thermal resistance contact thermal resistance v ds = v dss , v gs = 0v i d = 30ma, v ds = 10v v gs = v gss , v ds = 0v i d = 300a v gs = 15v i d = 300a v gs = 15v i d = 300a terminal-chip v ds = 10v v gs = 0v v dd = 80v, i d = 300a, v gs = 15v v dd = 80v, i d = 300a, v gs 15v r g = 4.2? , inductive load i s = 300a i s = 300a, v gs = 0v mosfet part (1/6 module)* 7 mosfet part (1/6 module)* 3 case to heat sink, thermal grease applied* 8 (1/6 module) case to heat sink, thermal grease applied* 3, * 8 (1/6 module) unit limits i dss v gs(th) i gss r ds(on) (chip) v ds(on) (chip) r (lead) c iss c oss c rss q g t d(on) t r t d(off) t f t rr * 1 q rr * 1 v sd * 1 r th(ch-c) r th(ch-c ) r th(c-f) r th(c -f ) conditions item symbol t yp. 6 1.6 3.0 0.48 0.91 0.7 1.0 1950 8.0 0.1 0.09 max. 1 7.3 1.5 2.2 0.66 110 15 10 400 400 500 400 200 1.3 0.13 0.096 t ch = 25 c t ch = 125 c t ch = 25 c t ch = 125 c t ch = 25 c t ch = 125 c electrical characteristics (t ch = 25c unless otherwise specified.) min. unit limits conditions parameter symbol t yp. 100 4000 max. k ? k resistance b constant t th = 25 c* 5 resistance at t th = 25 c, 50 c* 5 r th * 6 b* 6 ntc thermistor part r 25 : resistance at absolute temperature t 25 [k]: t 25 = 25 [c]+273.15 = 298.15 [k] r 50 : resistance at absolute temperature t 50 [k]: t 50 = 50 [c]+273.15 = 323.15 [k] b = in( )/( ) r 25 r 50 1 t 25 1 t 50
feb. 2009 3 mitsubishi fm600tu-3a high power switching use insulated package performance curves 0 200 100 400 300 500 600 0 0.4 0.8 1.2 1.6 2.0 capacitance (nf) drain-source voltage v ds (v) 0 500 400 100 300 200 600 57911 13 15 0 0.5 1.0 1.5 2.0 2.5 3.0 048121 620 04080 120 160 20 60 100 140 0 3 4 1 2 5 6 7 04080 120 160 20 60 100 140 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 0 1.0 2.0 3.0 4.0 0.5 1.5 2.5 3.5 v gs = 20v t ch = 25c t ch = 25c v gs = 12v v gs = 15v 15v 12v 10v 9v i d = 300a i d = 300a i d = 150a i d = 600a v ds = 10v t ch = 25c t ch = 125c v ds = 10v i d = 30ma c iss c oss c rss v gs = 0v transfer characteristics (typical) drain current i d (a) gate-source voltage v gs (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) channel temperature t ch (c) drain-source on-state voltage vs. temperature (typical) drain-source on-state resistance r ds(on) (m?) channel temperature t ch (c) gate threshold voltage vs. temperature (typical) gate threshold voltage v gs(th) (v) gate-source voltage v gs (v) drain-source on-state voltage vs. gate bias (typical) drain-source on-state voltage v ds(on) (v) capacitance vs. drain-source voltage (typical) chip chip chip chip
feb. 2009 4 mitsubishi fm600tu-3a high power switching use insulated package 0 4 8 12 16 20 0 500 1000 1500 2000 3000 2500 0.5 0.6 0.7 0.8 0.9 1.0 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 0 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 1 10 2 23 57 10 3 23 57 10 ? 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 10 2 10 20 30 40 5152 53545 010203040 515253545 v gs = 0v t ch = 25c t ch = 125c v dd = 60v v dd = 80v i d = 300a conditions: v dd = 80v v gs = 15v r g = 4.2? t ch = 125c inductive load t d(off) conditions: v dd = 80v v gs = 15v r g = 4.2? t ch = 125c inductive load e sw(off) e sw(on) e rr conditions: v dd = 80v v gs = 15v i d = 300a t ch = 125c inductive load e sw(off) e sw(on) e rr t d(on) t f t r conditions: v dd = 80v v gs = 15v i d = 300a t ch = 125c inductive load t d(off) t d(on) t f t r gate charge characteristics (typical) gate-source voltage v gs (v) gate charge q g (nc) free-wheel diode forward characteristics (typical) source current i s (a) source-drain voltage v sd (v) half-bridge switching characteristics (typical) switching time (ns) drain current i d (a) half-bridge switching characteristics (typical) switching time (ns) gate resistance r g (?) half-bridge switching characteristics (typical) switching loss (mj/pulse) drain current i d (a) half-bridge switching characteristics (typical) switching loss (mj/pulse) gate resistance r g (?) chip
feb. 2009 5 mitsubishi fm600tu-3a high power switching use insulated package 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 1 10 2 23 57 10 3 23 57 10 ? 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 conditions: v dd = 80v v gs = 15v r g = 4.2? t ch = 25c inductive load t rr i rr reverse recovery characteristics of free-wheel diode (typical) i rr (a), t rr (ns) source current i s (a) transient thermal impedance characteristics normalized transient thermal impedance z th(ch-c) time (s) single pulse t ch = 25c per unit base = r th(ch-c) = 0.13k/w chip layout 13 71 12 6 14 w uv np (110) (97) 90.8 57.8 24.8 49.2 29.2 (90) (80) (67) 47.2 51.8 label side 5 i 5 s 6 1 5 s 6 / 5 s 7 1 5 s 7 / 5 s 8 1 5 s 8 /
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